Published in
Simulation of Semiconductor Processes and Devices 2007, p. 153-156
DOI: 10.1007/978-3-211-72861-1_37
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Tunneling Properties of MOS Systems Based on High-k Oxides
Journal article published in 2007 by
F. Sacconi,
A. Pecchia 
,
M. Povolotskyi,
A. Di Carlo ,
Jm M. Jancu
,
M. Povolotskyi,
A. Di Carlo ,
Jm M. Jancu
