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American Institute of Physics, Applied Physics Letters, 12(98), p. 122502

DOI: 10.1063/1.3569149

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Tunneling magnetoresistance in epitaxial discontinuous Fe/MgO multilayers

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This paper is available in a repository.

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Abstract

Epitaxial discontinuous Fe/MgO multilayers have been grown by pulsed laser deposition on MgO(001) single-crystal substrates. The multilayers with 0.6 nm nominal Fe layers thickness are superparamagnetic and demonstrate tunneling magnetoresistance (TMR) in the current-in-plane configuration. Increasing deposition temperature causes an improvement in crystal quality and is accompanied by higher TMR ratios. The maximum value (9.2% TMR at room temperature and 18 kOe magnetic field) trebles that of polycrystalline samples deposited simultaneously on glass substrates. A model formula for TMR ratio that includes both spin-dependent tunneling and spin-filtering effect is proposed to explain these results.