Published in
Elsevier, Physica E: Low-dimensional Systems and Nanostructures, 1-3(18), p. 19-20, 2003
DOI: 10.1016/s1386-9477(02)00938-4
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Tunnel spectroscopy of small Al particle
Journal article published in 2003 by
Youiti Ootuka,
Teppei Kurosawa,
Akinobu Kanda,
Yuri Pashkin 
,
Jaw Shen Tsai
,
Jaw Shen Tsai
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Abstract
We present experimental results of the current–voltage characteristics of a lithographically made single-electron transistor with 10nm island. We find a stepwise current increase above the threshold voltage, which is attributed to the discrete energy levels in the island. The distribution of level spacing has a tendency that supports the level repulsion effect.