Structural and electrical properties of graphene elaborated on 3C-SiC(111)/Si and 3C-SiC(100)/Si templates, using propane-argon gas mixtures under CVD environment, are presented. On 3C-SiC(111), the graphitic phase is clearly attributable to graphene and presents good electrical conductivity at the macroscopic scale. The opposite case is observed on 3C-SiC(100), for which the graphitic phase develops more rapidly but with a high degree of disorientation. The graphitization, which can be coupled with 3C-SiC growth stage, is efficient over the whole surface of 2’’ wafer and allows to elaborate, in a single process, Graphene on Silicon wafers.