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IOP Publishing, Japanese Journal of Applied Physics, 7(53), p. 078004, 2014

DOI: 10.7567/jjap.53.078004

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Evaluation of minority carrier diffusion length of undoped n-BaSi2epitaxial thin films on Si(001) substrates by electron-beam-induced-current technique

Journal article published in 2014 by Masakazu Baba, Kentaro Watanabe, Kosuke O. Hara ORCID, Kaoru Toko, Takashi Sekiguchi, Noritaka Usami, Takashi Suemasu
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This paper is available in a repository.

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Abstract

We have grown a 400-nm-thick undoped n-BaSi2 epitaxial film on an n-Si(001) substrate by molecular beam epitaxy, and evaluated the diffusion length of minority carriers (holes) by an electron-beam-induced-current (EBIC) technique in the edge-scan configuration. The EBIC line-scan profile showed an exponential dependence on the distance from the tungsten probe. The diffusion length of minority carriers in the n-BaSi2 film was found to be approximately 1.5 µm. This value is much smaller than that in undoped n-BaSi2 on Si(111).