Tunable, Ultralow-Power Switching in Memristive Devices Enabled by a Heterogeneous Graphene-Oxide Interface
Journal article published in 2014 by
Min Qian,
Yiming Pan,
Fengyuan Liu,
Miao Wang,
Haoliang Shen,
Daowei He,
Baigeng Wang,
Yi Shi,
Feng Miao 
,
Xinran Wang
,
Xinran Wang
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Abstract
Memristive devices based on vertical heterostructures of graphene and TiOx show a significant power reduction that is up to ∼10(3) times smaller than that of conventional structures. This power reduction arises as a result of a tunneling barrier at the interface. The barrier is tunable, opening up the possibility of engineering several key memory characteristics.