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American Institute of Physics, Journal of Applied Physics, 8(85), p. 4800

DOI: 10.1063/1.370486

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Tunable epitaxial growth of magnetoresistive La2/3Sr1/3MnO3 thin films

Journal article published in 1999 by J. Fontcuberta, M. Bibes, B. Martínez, V. Trtik, C. Ferrater, F. Sánchez ORCID, M. Varela
This paper is available in a repository.
This paper is available in a repository.

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Abstract

We report on the growth of epitaxial La2/3Sr1/3MnO3 thin films on buffered Si(001) substrates. We show that a suitable choice of the buffer heterostructure allows one to obtain epitaxial (00h), (0hh), and (hhh) manganite thin films. The magnetotransport properties are investigated and we have found that the low-field magnetoresistance is directly related to the width of the normal-to-plane rocking curves, irrespective of the film orientation. The magnetic anisotropy of these films has also been determined. © 1999 American Institute of Physics.