In this work, we report on the results of the characterization of single semiconductor nanowires by x-ray fluorescence nanoprobe. Wurtzite InGaN and Co-implanted ZnO single nanowires were studied. Ternary semiconductor nanowires show an axial inhomogeneous elemental distribution, with Ga accumulating at the bottom and In at the top of the wires. The ZnO NWs, on the other hand, show a homogeneous distribution of the Co implanted along the nanowires, without signatures of clustering or segregation effects induced by the implantation. No signatures of unintentional doping are observed neither in the InGaN nor the ZnO NWs. These overall results demonstrate the suitability of X-ray fluorescence nanoprobe for the characterization of different semiconductor NWs. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)