In this work we analyzed the variation of wafer curvature due to the growth of thin Si layers on top of 3C-SiC/Si films. The final Si/3C-SiC/Si hetero-structure, allows not only to have a deeper understanding of the stress within the different layers, but can also be used for MEMS applications, using the Si film as sacrificial layer in order to obtain 3C-SiC free-standing structure, or for electronic application, e.g. using the thin Si layer as high quality MOSFET channel and the SiC layer as the drift region. In details, the influence on wafer curvature by the growth of thin Si layer on top on the 3C-SiC/Si film as been studied by optical profilometer. A theoretical model was also applied in order to fit the measured curvature of the hetero-structure and optimize the system. Finally, in order to study the morphology of the hetero-structure micro-Raman spectroscopy and Transmission Electron Microscopy (TEM) measurements has been performed.