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Institute of Electrical and Electronics Engineers, Journal of Display Technology, 9(9), p. 729-734, 2013

DOI: 10.1109/jdt.2012.2227298

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Extended-Gate ISFETs Based on Sputtered Amorphous Oxides

This paper is available in a repository.
This paper is available in a repository.

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Abstract

We present the results obtained with an extended-gate ISFET totally based on amorphous oxides (GIZO as the semicon-ductor, Ta O :SiO as the dielectric and Ta O as the sensitive layer). A full characterization of the device was performed with constant ionic strength pH buffer solutions, revealing a sensitivity of 40 mV/pH with small hysteresis, and good linearity in the pH 4–pH 10 range buffer solutions. These results clearly show that it is possible to produce room-temperature disposable and low cost bio-sensors.