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Elsevier, Thin Solid Films, 15(515), p. 6172-6174

DOI: 10.1016/j.tsf.2006.12.054

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Surface science studies of Cu containing back contacts for CdTe Solar Cells

Journal article published in 2007 by B. Späth, K. Lakus Wollny, J. Fritsche, C. S. Ferekides, A. Klein ORCID, W. Jaegermann
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

The electronic interface properties of Cu2 − xTe with CdTe have been investigated using in-situ photoelectron spectroscopy (XPS, UPS) in comparison to CdTe/Cu and CdTe/Te interfaces. A band bending towards the Fermi level as a result of the p-doping can be seen in the CdTe by depositing Cu2 − xTe. Different Cu2 − xTe films were prepared by varying the deposition parameters such as substrate temperature and deposition rate of the Cu and Te sources. For all Cu2 − xTe/CdTe interfaces a valence band offset of 0.8 ± 0.05 eV has been found.