In this work we examine the electrical behavior of thin (~10 nm) SiO₂/TiO₂ gate insulator stacks in MOS capacitors that have undergone multiple hard breakdown events. The post-breakdown current is modeled using a simple equivalent electrical circuit consisting of a diode with series and parallel resistances. We show that the current flowing through the non-damaged oxide area still plays a significant role even after breakdown. Similarities with previous studied systems are also discussed.