Published in

ECS Meeting Abstracts, 32(MA2012-02), p. 2648-2648, 2012

DOI: 10.1149/ma2012-02/32/2648

The Electrochemical Society, ECS Journal of Solid State Science and Technology, 1(2), p. P9-P12

DOI: 10.1149/2.013301jss

The Electrochemical Society, ECS Transactions, 5(50), p. 269-277, 2013

DOI: 10.1149/05005.0269ecst

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Characterization of Deep Levels Introduced by RTA and by Subsequent Anneals in n-Type Silicon

Journal article published in 2012 by Dawid Kot, Teimuraz Mchedlidze ORCID, Gudrun Kissinger, Wilfried Von Ammon
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

In this work, deep levels introduced by RTA and by subsequent anneals in n-type silicon were studied by deep level transient spectroscopy and by photoluminescence. After annealing at 650 {degree sign}C, centers related to rod-like defects appeared. Furthermore, signals related to thermal donors were found in a wide temperature range. New thermal donors were found even after annealing at temperatures above 900 {degree sign}C. The appearance of rod-like defects indicates that during cooling after RTA soak interstitials supersaturate. The appearance of rod-like defects is accompanied by a decrease of the thermal donor concentration