a sai.jiao@univ-tours.fr b mzielinski@novasic.com, c jean-francois.michaud@univ-tours.fr, d Abstract. A detailed experimental study of the mean and gradient stress, existing in the as-grown cubic silicon carbide epilayers, is presented in this paper. (100) and (111) oriented epiwafers with considerable film thickness variation have been elaborated using a horizontal low pressure chemical vapor deposition reactor. The mean and gradient stress within the 3C-SiC film were estimated from the static mechanical deformation of micromachined clamped-free beams. For both studied orientations, we observe a stress gradient inversion phenomenon that can be explained in terms of creep occurring in 3C-SiC film.