Dissemin is shutting down on January 1st, 2025

Published in

EPL Association, European Physical Society Letters, 3(95), p. 37002

DOI: 10.1209/0295-5075/95/37002

Links

Tools

Export citation

Search in Google Scholar

Quantitative analysis of the weak anti-localization effect in ultrathin bismuth films

This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Red circle
Preprint: archiving forbidden
Orange circle
Postprint: archiving restricted
Red circle
Published version: archiving forbidden
Data provided by SHERPA/RoMEO

Abstract

Magnetic-field dependence of conductivity in ultrathin Bi films is measured in applied magnetic fields up to 9 T, in both directions, perpendicular and parallel to the film plane, at temperatures down to 0.4K, and analyzed in terms of the weak anti-localization theory in twodimensional systems. With the reduction of film thickness, the classical magnetoresistance effect is completely suppressed, and only the weak anti-localization effect is observed. The parameters extracted from the analysis allow the study of the contribution of the different scattering mechanisms to the electronic transport properties in ultrathin Bi films. In particular, the thickness-independent spin-orbit scattering length indicates that the spin-orbit split surface states dominate the transport in the ultrathin-film limit.