Published in

American Institute of Physics, Applied Physics Letters, 12(91), p. 122102

DOI: 10.1063/1.2771084

Links

Tools

Export citation

Search in Google Scholar

Scanning tunneling spectroscopy of inhomogeneous electronic structure in monolayer and bilayer graphene on SiC

Journal article published in 2007 by Victor W. Brar, Yuanbo Zhang, Yossi Yayon, Taisuke Ohta, Aaron Bostwick, Jessica L. McChesney ORCID, Karsten Horn, Eli Rotenberg, Michael F. Crommie
This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Green circle
Preprint: archiving allowed
Upload
Green circle
Postprint: archiving allowed
Upload
Orange circle
Published version: archiving restricted
Upload
Policy details
Data provided by SHERPA/RoMEO

Abstract

We present a scanning tunneling spectroscopy (STS) study of the local electronic structure of single and bilayer graphene grown epitaxially on a SiC(0001) surface. Low voltage topographic images reveal fine, atomic-scale carbon networks, whereas higher bias images are dominated by emergent spatially inhomogeneous large-scale structure similar to a carbon-rich reconstruction of SiC(0001). STS spectroscopy shows a ~100meV gap-like feature around zero bias for both monolayer and bilayer graphene/SiC, as well as significant spatial inhomogeneity in electronic structure above the gap edge. Nanoscale structure at the SiC/graphene interface is seen to correlate with observed electronic spatial inhomogeneity. These results are important for potential devices involving electronic transport or tunneling in graphene/SiC. ; Comment: Acknowledgment added. 11 pages, 3 figures