American Institute of Physics, Applied Physics Letters, 5(92), p. 051101, 2008
DOI: 10.1063/1.2840181
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A detailed study of the carrier absorption (CA) mechanism in multilayered silicon-nanocrystals (Si-nc) rib waveguides is reported. A pump (532 nm) and probe (1535 nm) technique is used to assess two loss mechanisms due to optical excitation of the system: one characterized by slow (seconds) dynamics related to heating and the other characterized by fast (microsecond) dynamics associated to CA mechanisms within the Si-nc. CA losses increase with pumping flux of up to 6 dB/cm for 3×1020 photons/cm2 s. By comparing the temporal dynamics of CA losses and time resolved photoluminescence, we suggest that both are determined by exciton generation and recombination.