American Institute of Physics, Applied Physics Letters, 10(89), p. 102503
DOI: 10.1063/1.2344932
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We report on the anomalous Hall coefficient and longitudinal resistivity scaling relationships on a series of annealed Ga1-xMnxAs epilayers (x~0.055). As-grown samples exhibit scaling parameter n of ~ 1. Near the optimal annealing temperature, we find n ~ 2 to be consistent with recent theories on the intrinsic origins of anomalous Hall Effect in Ga1-xMnxAs. For annealing temperatures far above the optimum, we note n > 3, similar behavior to certain inhomogeneous systems. This observation of atypical behavior agrees well with characteristic features attributable to spherical resonance from metallic inclusions from optical spectroscopy measurements. Comment: 3 pages, 3 figures