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2015 International Symposium on Signals, Circuits and Systems (ISSCS)

DOI: 10.1109/isscs.2015.7203934

2015 Conference on Design of Circuits and Integrated Systems (DCIS)

DOI: 10.1109/dcis.2015.7388610

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Design of a High Efficiency GaN-HEMT RF Power Amplifier

Proceedings article published in 2015 by João Carvalho, Jose Machado da Silva, Yelin Wang, Nagavenkat K. Gaddam, Torben Larsen, José Machado, J. M. Da Silva ORCID
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This paper is available in a repository.

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Abstract

This paper presents the design and implementation of a GaN-HEMT, class-J power amplifier suitable for cognitive radio transceivers, i. e., which presents high-efficiency and wideband characteristics, being these maintained for large load variations. Simulation results are presented which show large-signal measurement results of 30 dB gain with 60%-76% power-added efficiency (PAE) over a band of 1.3-2.3 GHz. Adaptivity to load changes is being developed to ensure PAE above 70% for large load variations.