Published in
2010 53rd IEEE International Midwest Symposium on Circuits and Systems
DOI: 10.1109/mwscas.2010.5548811
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Design of a CMOS transducer interface for an UV silicon sensor
Journal article published in 2010 by
A. Diaz Méndez,
M. Rocha Pérez,
M. Aceves,
J. Pedraza,
E. Gómez,
C. Dominguez 
,
A. Merlos,
X. Formatje,
Ieee
,
A. Merlos,
X. Formatje,
Ieee
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Abstract
This paper presents the cointegration of an UV silicon sensor with extended responsivity, and its conditioning circuit. The sensor's output current is converted to a digital code for subsequent processing. Post-layout results shows a suitable response in order to obtain a digital code corresponding to sensor photocurrent in the range of 200 to 1100nm. The circuit has been designed in a CNM 2.5μm CMOS technology.