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Elsevier, Solid-State Electronics, 12(47), p. 2183-2186, 2003

DOI: 10.1016/s0038-1101(03)00194-1

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Microwave properties of epitaxial large-area Ca-doped YBa2Cu3O7−δ thin films on r-plane sapphire

Journal article published in 2003 by M. Lorenz ORCID, H. Hochmuth, M. Grundmann ORCID, E. Gaganidze, J. Halbritter
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Ca doping of YBa2Cu3O7−δ (YBCO) is well known to enhance the critical current density in large-angle grain boundaries for example of bicrystals. However, up to now no data are available on microwave properties of epitaxial Ca-doped YBa2Cu3O7−δ thin films on r-plane sapphire with CeO2 buffer layer.Therefore, first results are presented for large-area pulsed laser deposition (PLD) grown CaxY1−xBa2Cu3O7−δ films on 3-in. diameter sapphire wafers. The PLD process is optimised for undoped YBCO thin films and shows high reproducibility for YBCO. The microwave surface resistance Rs at 8.5 GHz of Ca-doped YBCO (x=0.1) thin films shows clear reduction (up to 20%) with respect to that of YBCO for temperatures from about 20–50 K. In addition, microwave surface resistance Rs of Ca-doped YBCO is lower than that of YBCO even for enhanced microwave surface magnetic field up to about 20 mT for temperatures 20 and 40 K.