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American Physical Society, Physical Review B (Condensed Matter), 13(60), p. 9579-9582, 1999

DOI: 10.1103/physrevb.60.9579

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Magnetoresistance at artificial interfaces in the itinerantSrRuO3ferromagnet

This paper is available in a repository.
This paper is available in a repository.

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Abstract

The magnetoresistance across interfaces in the itinerant ferromagnetic oxide SrRuO3 have been studied. To define appropriately the interfaces, epitaxial thin films have been grown on bicrystalline and laser-patterned SrTiO3 substrates. Comparison is made with results obtained on similar experiments using the double-exchange ferromagnetic oxide La2/3Sr1/3MnO3. It is found that in SrRuO3, interfaces induce a substantial negative magnetoresistance, although no traces of the low-field spin tunneling magnetoresistance are found. We discuss these results on the basis of the distinct degree of spin polarization in ruthenates and manganites and the different nature of the surface magnetic layer formed at interfaces.