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American Institute of Physics, Applied Physics Letters, 3(76), p. 360

DOI: 10.1063/1.125754

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Nanometer-scale conversion of Si3N4 to SiOx

Journal article published in 2000 by F. S.-S. Chien ORCID, J.-W. Chang, S.-W. Lin, Y.-C. Chou, T. T. Chen, S. Gwo, T.-S. Chao, W.-F. Hsieh
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

It has been found that atomic force microscope (AFM) induced local oxidation is an effective way for converting thin (≪5  nm ) Si 3 N 4 films to SiO x. The threshold voltage for the 4.2 nm film is as low as 5 V and the initial growth rate is on the order of 103 nm/s at 10 V. Micro-Auger analysis of the selectively oxidized region revealed the formation of SiO x. Due to the large chemical selectivity in various etchants and great thermal oxidation rate difference between Si 3 N 4 , SiO 2 , and Si, AFM patterning of Si 3 N 4 films can be a promising method for fabricating nanoscale structures. © 2000 American Institute of Physics.