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IOP Publishing, Journal of Physics: Condensed Matter, 42(20), p. 429801-429801, 2008

DOI: 10.1088/0953-8984/20/42/429801

IOP Publishing, Journal of Physics: Condensed Matter, 47(19), p. 476207, 2007

DOI: 10.1088/0953-8984/19/47/476207

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Magnetism in Ar-implanted ZnO

Journal article published in 2007 by R. P. Borges, R. C. da Silva ORCID, S. Magalhães, M. M. Cruz, M. Godinho
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

ZnO single crystals were implanted with Ar ions with an energy of 100 keV and different fluences. Ferromagnetic behaviour is observed at room temperature after implantation. This behaviour is suppressed after consecutive annealings at 400 and 500 °C. Although trace transition metal impurities have been identified in the virgin samples, it is shown that they cannot account for the observed magnetic behaviour that is assigned to the presence of implantation-induced lattice defects.