Published in

Wiley, ChemPhysChem, 18(10), p. 3190-3193, 2009

DOI: 10.1002/cphc.200900523

Links

Tools

Export citation

Search in Google Scholar

STM and DFT investigations of isolated porphyrin on a silicon based semiconductor at room temperature

Journal article published in 2009 by Bulent Baris, Mohamed El Garah, Younes Makoudi, Frank Palmino, Eric Duverger, Philippe Sonnet, Laurent Chaput, Andre Gourdon ORCID, Frederic Cherioux
This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Green circle
Preprint: archiving allowed
Upload
Orange circle
Postprint: archiving restricted
Upload
Red circle
Published version: archiving forbidden
Policy details
Data provided by SHERPA/RoMEO

Abstract

Model compound: Individual adsorbed Cu-5,10,15,20-tetrakis(3,5-di-tert-butylphenyl) porphyrins are observed by STM on a Si(111)-B surface with an atomic resolution at room temperature (see figure). The conformational modifications after the adsorption on the surface is successfully interpreted with DFT calculations performed on the entire system (molecule and substrate).