Published in

American Chemical Society, Nano Letters, 11(15), p. 7639-7643, 2015

DOI: 10.1021/acs.nanolett.5b03531

Links

Tools

Export citation

Search in Google Scholar

Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping

Journal article published in 2015 by James Thomas Griffiths, Siyuan Zhang, Bertrand Rouet-Leduc, Wai Yuen Fu, An Bao, Dandan Zhu, David J. Wallis ORCID, Ashley Howkins, Ian Boyd ORCID, David Stowe, Menno J. Kappers, Colin J. Humphreys, Rachel A. Oliver
This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Green circle
Preprint: archiving allowed
  • Must obtain written permission from Editor
  • Must not violate ACS ethical Guidelines
Upload
Orange circle
Postprint: archiving restricted
  • Must obtain written permission from Editor
  • Must not violate ACS ethical Guidelines
Upload
Red circle
Published version: archiving forbidden
Policy details
Data provided by SHERPA/RoMEO

Abstract

Nano-cathodoluminescence reveals the spectral properties of individual InGaN quantum wells in high efficiency light emitting diodes. We observe a variation in the emission wavelength of each quantum well, in correlation with the Si dopant concentration in the quantum barriers. This is reproduced by band profile simulations which reveal the reduction of the Stark shift in the quantum wells by Si doping. We demonstrate nano-cathodoluminescence is a powerful technique to optimize doping in optoelectronic devices.