Published in
Elsevier, Microelectronics Journal, 8(26), p. 789-795
DOI: 10.1016/0026-2692(95)00038-0
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MBE growth and Raman analysis of [hhk]GaAs/(Si or CaF2) highly strained hetero-structures
Journal article published in 1995 by
P. Puech,
E. Daran,
G. Landa,
C. Fontaine,
P. S. Pizani 
,
R. Carles
,
R. Carles
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Abstract
Highly strained GaAs layers have been grown by molecular beam epitaxy on (100)-, (111)- or (112)-oriented Si or CaF2 substrates. The origin, sign, bisotropic nature, value, homogeneity and relaxation of the built-in strain have been studied by Raman spectroscopy. Specific measurements have been performed by using selection rules and line shape analysis over a wide temperature range.