Instytut Podstaw Informatyki, Acta Physica Polonica A, 4-5(102), p. 687-694, 2002
DOI: 10.12693/aphyspola.102.687
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We have observed a paramagnetic-to-ferromagnetic phase transition in short period InGaMnAs/InGaAs superlattices. The thicknesses of magnetic InGaMnAs layers in the structures studied was chosen to be 4 or 8 molecular layers (12 Å or 24 Å). The nonmagnetic InGaAs spacer layers are 12 Å thick. The In content of InGaMnAs and InGaAs layers was chosen in such a way that magnetic layers were: deep potential wells, high potential barriers or shallow potential wells. For superlattices with 8 monolayer thick InGaMnAs magnetic layers and 4 monolayer thick InGaAs nonmagnetic spacers the temperatures of paramagnetic-to-ferromagnetic phase transition do not depend on the band offsets between InGaMnAs and InGaAs adjusted by the In content.