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SpringerOpen, Nanoscale Research Letters, 1(7), 2012

DOI: 10.1186/1556-276x-7-375

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Copper-selective electrochemical filling of macropore arrays for through-silicon via applications

Journal article published in 2012 by Thomas Defforge ORCID, Jérôme Billoué, Marianne Diatta, François Tran-Van, Gaël Gautier
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

In this article, the physico-chemical and electrochemical conditions of through-silicon via formation were studied. First, macropore arrays were etched through a low doped n-type silicon wafer by anodization under illumination into a hydrofluoric acid-based electrolyte. After electrochemical etching, ‘almost’ through-silicon macropores were locally opened by a backside photolithographic process followed by anisotropic etching. The 450 × 450-μm² opened areas were then selectively filled with copper by a potentiostatic electrochemical deposition. Using this process, high density conductive via (4.5 × 105 cm−²) was carried out. The conductive paths were then electrically characterized, and a resistance equal to 32 mΩ/copper-filled macropore was determined.