The contributions of Mn3d, Fe3d and Co3d electrons to the valence band electronic structure of Hg1−xTMxSe (TM=Mn, Fe, Co) crystals were investigated by means of resonant photoemission. The comparison of photoemission spectra with the results of theoretical calculations made by the CPA (coherent potential approximation) method shows that the valence band of Hg1−xTMxSe diluted magnetic semiconductors is strongly influenced by TM3d electrons. We find out that for all TM incorporated in the HgSe matrix, 3d electrons with t2g symmetry hybridize strongly with the valence band of the crystal, whereas 3d electrons with e2g symmetry are not hybridized with the valence band. The contribution of 3dt2g electrons is spread over the valence band with the maximum at 3.4–3.8 eV below the Fermi level. The contributions of 3de2g electrons were found in the middle part of the valence band and, in the Fe and Co case, also at the edge of the valence band.