Springer (part of Springer Nature), Journal of Electronic Materials, 7(30), p. 834-840
DOI: 10.1007/s11664-001-0067-2
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The Smart-Cut((R)) process, based on ion implantation (hydrogen, helium) and wafer bonding, appears more and more as a generic process. The first part of the paper is dedicated to the specific case of thermally-induced splitting. Cavity growth by the Ostwald ripening mechanism and crack propagation are responsible for thermally-induced splitting. In this case, the splitting kinetics are controlled by hydrogen diffusion. In the second part, the latest results concerning new structures are presented.