Published in

American Institute of Physics, Journal of Applied Physics, 10(96), p. 5663

DOI: 10.1063/1.1805718

Links

Tools

Export citation

Search in Google Scholar

Magnetic and structural properties of GaN thin layers implanted with Mn, Cr, or V ions

This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Green circle
Preprint: archiving allowed
Green circle
Postprint: archiving allowed
Orange circle
Published version: archiving restricted
Data provided by SHERPA/RoMEO

Abstract

We report on magnetic and structural properties of n- and p-type GaN layers implanted with Mn, Cr, and V. The samples were subsequently annealed in a N(2) atmosphere at a constant temperature in the range between 700 and 1050degreesC. Measurements of the magnetization as a function of magnetic field as well as of the temperature show typical paramagnetic behavior. In addition, a weak antiferromagnetic coupling between the implanted ions was observed. 3d-metal rich precipitates of crystalline nature are revealed by high resolution transmission electron microscopy. (C) 2004 American Institute of Physics.