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Trans Tech Publications, Solid State Phenomena, (121-123), p. 29-32, 2007

DOI: 10.4028/www.scientific.net/ssp.121-123.29

Trans Tech Publications, Solid State Phenomena, p. 29-32

DOI: 10.4028/3-908451-30-2.29

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Direct Wafer Bonding for Nanostructure Preparations

Journal article published in 2007 by Hubert Moriceau, F. Rieutord, C. Morales, A. M. Charvet, O. Rayssac, B. Bataillou, F. Fournel, J. Eymery ORCID, A. Pascale, P. Gentile, A. Bavard, J. Mézière, Christophe Maleville, B. Aspar
This paper is available in a repository.
This paper is available in a repository.

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Abstract

Direct Wafer Bonding has been widely developed and is very attractive for a lot of applications. Using original techniques based on direct bonding enable to carry out specific engineered substrates. Various illustrations are given among which twisted Si-Si bonded substrates, where buried dislocation networks play a key role in the subsequent elaboration of nanostructures.