Elsevier, Solid-State Electronics, 2(53), p. 145-149
DOI: 10.1016/j.sse.2008.10.011
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A procedure to analyze the effect of the MOSFET drain-bulk junction tunneling current at high frequencies is presented. This procedure allows identifying the presence of band-to-band tunneling in short channel-length MOSFETs at different drain-to-source voltages. Since this analysis is based on experimental S-parameters performed to a single MOSFET, the procedure is not affected by the variations occurring in devices with different geometries. Excellent correlation between simulated and experimental output impedance for a 0.1μm channel-length bulk MOSFET up to 40GHz demonstrates the validity of the proposed technique.