Regularly ordered porous structures were fabricated in ion-implanted p-and n-type silicon. Mono-layered Langmuir-Blodgett (LB) films and a double-layered film from Stöber silica spheres of 350 nm diameter were used as masking layers in the boron and phosphorus ion-implantation step, providing the laterally periodic doping structure. The various ordered porous structures are obtained after the anodic etch proc-ess. The PS layer can be removed by alkaline etching. The masking LB silica layer and the resulting struc-tures are shown in the SEM images. Using the self-assembled nanoparticles, regular patterns of high reso-lution can easily be prepared in an inexpensive manner on large area silicon.