Elsevier, Materials Science in Semiconductor Processing, (38), p. 324-328, 2015
DOI: 10.1016/j.mssp.2014.11.018
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This work presents the results of measuring the parameters of electrical conductivity of the glasses from the system Bix(As2S3)100−x (x=1.5, 3, 5 and 7 at%), carried out in DC and AC regimes. The values of the activation energy ΔEσ and of the pre-exponentail factor σ0, obtained by fitting the DC component of the conductivity as a function of temperature, served as the basis for establishing the dominant mechanism of charge transport processes in the investigated glasses. Measurements in AC regime were performed on the samples with 5 and 7 at% Bi, and analyzed in terms of the CBH (Correlated Barrier Hopping) model.