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American Institute of Physics, Applied Physics Letters, 12(98), p. 123101

DOI: 10.1063/1.3567492

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GaAs nanoneedles grown on sapphire

This paper is available in a repository.
This paper is available in a repository.

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Abstract

Heterogeneous integration of dissimilar single crystals is of intense research interests. Lattice mismatch has been the most challenging bottleneck which limits the growth of sufficient active volume for functional devices. Here, we report self-assembled, catalyst-free, single crystalline GaAs nanoneedles grown on sapphire substrates with 46% lattice mismatch. The GaAs nanoneedles have a 2–3 nm tip, single wurtzite phase, excellent optical quality, and dimensions scalable with growth time. The needles have the same sharp, hexagonal pyramid shape from ∼ 100 nm (1.5 min growth) to ∼ 9 μm length (3 h growth).