Room-Temperature Tunneling Behavior of Boron Nitride Nanotubes Functionalized with Gold Quantum Dots
Journal article published in 2013 by
Chee Huei Lee,
Shengyong Qin,
Madhusudan A. Savaikar,
Jiesheng Wang,
Boyi Hao,
Dongyan Zhang,
Douglas Banyai,
John A. Jaszczak,
Kendal W. Clark,
Juan-Carlos Idrobo,
An-Ping Li 
,
Yoke Khin Yap
,
Yoke Khin Yap
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Abstract
One-dimensional arrays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction channels of tunneling field-effect transistors. We demonstrate that tunneling currents can be modulated at room temperature by tuning the lengths of QD-BNNTs and the gate potentials. Our discovery will inspire the creative use of nanostructured metals and insulators for future electronic devices.