American Institute of Physics, Applied Physics Letters, 3(100), p. 031111
DOI: 10.1063/1.3678031
ISLC 2012 International Semiconductor Laser Conference
DOI: 10.1109/islc.2012.6348336
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We demonstrate room temperature, continuous wave lasing of laser diodes based on AlGaAs whispering gallery mode (WGM) resonators (microcylinder and microring) embedding a quantum dot (QD) active layer. Using InGaAlAs QDs, high-Q (>60 000) lasing modes are observed around 910 nm, up to 50 °C. Lasing with similar performance is obtained around 1230 nm, using InAs QDs. Furthermore, we show that the current injection in the active part of the device is improved in ring resonators, leading to threshold currents of approximately 4 mA for a device with 80 μm diameter. This geometry also suppresses WGMs with a high radial order, thus simplifying the lasing spectra. In these conditions, stable single-mode and two-color lasing can be obtained.