We monitored the defect migration and interaction with impurities and dopant atoms using in situ (leakage current, IL) and ex situ deep level transient spectroscopy (DLTS) techniques. n-Type and p-type Si samples were implanted with He or Si at energies of 0.04–10 MeV to doses of 109–1014cm−2 and dose rates of 107–1012cm−2s−1 and the depth profiles of the room temperature (RT) stable complexes studied. Through IL we monitored defect diffusion effects in reverse biased junctions, during and after implantation and observed that IL is mostly given by vacancy-type defects in both n-type and p-type Si. When the implantation dose is above a threshold (2×1013Hecm−2 for 1 MeV He) a strong difference arises in the defect generation in p-type Si, suggesting a different defect evolution due to the B presence.