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American Physical Society, Physical Review B (Condensed Matter), 8(51), p. 5033-5037

DOI: 10.1103/physrevb.51.5033

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Relaxation-induced polarized luminescence fromInxGa1−xAs films grown on GaAs(001)

Journal article published in 1995 by K. Rammohan, Y. Tang, D. H. Rich, R. S. Goldman, H. H. Wieder, K. L. Kavanagh ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

We have investigated local variations in the optical properties of In0.06Ga0.94As/GaAs using linearly polarized cathodoluminescence imaging and spectroscopy. The influence of substrate misorientation on the polarization anisotropy of excitonic luminescence in the In0.06Ga0.94As films was examined. Local variations in excitonic polarization anisotropy and emission energy are found to correlate spatially with dark line defects which result from the formation of interfacial misfit dislocations.