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American Institute of Physics, Applied Physics Letters, 24(88), p. 242501

DOI: 10.1063/1.2212066

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Excitation and spin-transport of hot holes in ballistic hole magnetic microscopy

Journal article published in 2006 by E. Haq, T. Banerjee ORCID, M. H. Siekman, J. C. Lodder, R. Jansen
This paper is available in a repository.
This paper is available in a repository.

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Abstract

A hybrid structure of a ferromagnetic Co/Au/Ni81Fe19 trilayer on p-type silicon is used to probe the excitation of electron-hole pairs in a ferromagnet during inelastic decay of hot electrons and the subsequent spin-dependent transport of the excited holes into the valence band of the p-type Si collector. The hole current is remarkably sensitive to magnetic fields, with a magnetocurrent of up to 250% and, unexpectedly, with a positive sign. We determine effective attenuation lengths and their magnetic field and bias voltage dependence.