Ge1−xSnx alloys were grown on Ge(001) substrates in a conventional rf sputtering system. We determined the in-plane and in-growth lattice parameters, as well as the alloy bulk lattice parameter of the alloys for different Sn concentrations by high resolution x-ray diffraction. The Sn concentration was determined assuming Vegard’s law for the alloy lattice parameter. At low concentrations, we observed that Ge1−xSnx layers have pseudomorphic characteristics for layer thickness from 320 to 680 nm. These characteristics of Ge1−xSnx layers agree with the People and Bean critical thickness model. This structural study opens the possibility of growing dislocation-free Ge1−xSnx alloys below the critical thickness. © 2003 American Institute of Physics.