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American Institute of Physics, Review of Scientific Instruments, 2(83), p. 02B311

DOI: 10.1063/1.3672112

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Molecular phosphorus ion source for semiconductor technology

Journal article published in 2012 by V. I. Gushenets, A. S. Bugaev, E. M. Oks ORCID, A. Hershcovitch, T. V. Kulevoy
This paper is available in a repository.
This paper is available in a repository.

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Abstract

This paper presents results on the generation of molecular phosphorus ion beams in a hot filament ion source. Solid red phosphorous is evaporated mainly as tetra-atomic molecules up to a temperature of 800°C. Thus, one of the main conditions for producing maximum P(4)(+) fraction in the beam is to keep the temperature of the phosphorous oven, the steam line and the discharge chamber walls no greater than 800°C. The prior version of our ion source was equipped with a discharge chamber cooling system. The modified source ensured a P(4)(+) ion beam current greater than 30% of the total beam current.