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Published in

Elsevier, Physica E: Low-dimensional Systems and Nanostructures, 2-4(13), p. 942-945

DOI: 10.1016/s1386-9477(02)00240-0

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A novel electrical property of three-terminal ballistic junctions and its applications in nanoelectronics

Journal article published in 2002 by H. Q. Xu ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

A room-temperature electrical property of three-terminal ballistic junctions (TBJs) is predicted. For a symmetric TBJ, it is shown that when finite voltages V and −V are applied to the left and right branches, the voltage output Vc from the central branch will always be negative. This characteristic appears even when the symmetry in the TBJ is broken, provided that |V| is larger than a threshold. Applications of these devices in nanoelectronics are proposed.