Published in
American Institute of Physics, Applied Physics Letters, 14(105), p. 141601, 2014
DOI: 10.1063/1.4896978
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Bonding mechanism of a yttrium iron garnet film on Si without the use of an intermediate layer
Journal article published in 2014 by
Konstantinos Pantzas 
,
Gilles Patriarche,
Anne Talneau,
Jamel Ben Youssef
,
Gilles Patriarche,
Anne Talneau,
Jamel Ben Youssef
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Abstract
Direct bonding of yttrium iron garnet (YIG) on silicon without the use of an intermediate bonding layer is demonstrated and characterized using scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy. During the bonding experiment, the garnet is reduced in the presence of oxide-free silicon. As a result, a 5 nm thick SiO2/amorphous-YIG bilayer is formed and welds the garnet to silicon.