IOP Publishing, Journal of Physics: Conference Series, (647), p. 012001, 2015
DOI: 10.1088/1742-6596/647/1/012001
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We exploit the broad-band transparency of graphene and the favorable energy band line-up of graphene with n-type InSe thin films to create graphene-InSe-graphene heterostructures with high photosensitivity at room temperature. We use a semiclassical model to describe the photoresponse and its dependence on the electron transit time through the InSe layer.