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Abrupt metal-to-insulator transition at the polar (e.g., LaAlO3) and nonpolar oxide (e.g., SrTiO3) heterointerfaces is fascinating. In the vicinity of the metal-to-insulator transition critical thickness where the exact critical thickness is found to be 3.65 ± 0.05 uc, strain, carrier concentration, and Kondo induced scattering manifest their great sensitive role on carrier mobility in LaAlO3/SrTiO3 interfaces.