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Wiley, Advanced Materials Interfaces, 6(1), p. 1400155, 2014

DOI: 10.1002/admi.201400155

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Bandgap Control of the Oxygen-Vacancy-Induced Two-Dimensional Electron Gas in SrTiO3

This paper is available in a repository.
This paper is available in a repository.

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Data provided by SHERPA/RoMEO

Abstract

Tremendous bandgap enhancement (up to 20% greater than the bulk value) is found in thin films of the workhorse material for oxide electronics-SrTiO3, fabricated by pulsed laser deposition below 800 °C. The origin is comprehensively investigated. More importantly, it is utilized to tailor the electronic and magnetic phases of the 2DEG in SrTiO3-based interface systems.