Bandgap Control of the Oxygen-Vacancy-Induced Two-Dimensional Electron Gas in SrTiO3
Journal article published in 2014 by
Z. Q. Liu,
W. Lu,
S. W. Zeng,
J. W. Deng,
Z. Huang,
C. J. Li,
M. Motapothula,
W. M. Lü,
L. Sun,
K. Han,
J. Q. Zhong 
,
P. Yang,
N. N. Bao,
W. Chen,
J. S. Chen
and other authors.
,
P. Yang,
N. N. Bao,
W. Chen,
J. S. Chen
and other authors.
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Published version:
archiving forbidden
Data provided by 
Abstract
Tremendous bandgap enhancement (up to 20% greater than the bulk value) is found in thin films of the workhorse material for oxide electronics-SrTiO3, fabricated by pulsed laser deposition below 800 °C. The origin is comprehensively investigated. More importantly, it is utilized to tailor the electronic and magnetic phases of the 2DEG in SrTiO3-based interface systems.