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IOP Publishing, Semiconductor Science and Technology, 5(23), p. 055008, 2008

DOI: 10.1088/0268-1242/23/5/055008

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Ballistic electron attenuation length in titanylphthalocyanine films grown on GaAs

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This paper is available in a repository.

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Abstract

In this work we present an experimental investigation of hot electron transport in thin titanylphthalocyanine films grown on GaAs. Ballistic electron emission microscopy/spectroscopy is used as the experimental method. The transmission through a Au/titanylphthalocyanine/GaAs heterostructure is evaluated. In addition, an approach to calculate the attenuation length in titanylphthalocyanine is presented.